| Extreme Tweaker | | 我的设置 | | |
| | 缩写及可用参数调幅 | U3.6G-D1200 | 狂少 | 备注 |
Ai Overclock Tuner
| | [Manual] | [Manual] | 手动超频模式 |
| CPU Ratio Setting | | [8] | [8] | CPU倍频 |
| FSB Frequency | | [450] | [450] | CPU 外频,尽量提高 |
| FSB Strap to North Bridge | | [400] | [Auto] | |
| PCIE Frequency | | [100] | | 设[110]有助3D游戏 |
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| DRAM Frequency | | [1199] | | 内存频率,受[FSB Strap to North Bridge]设置影响 |
| DRAM Command Rate | | [Auto] | [Auto] | [CR]内存首命令延迟,若内存体质超强可设1T |
| DRAM Timing Conterol | | [Manual] | [Manual] | 内存参数选项 |
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| CAS# Latency | [CL], [tCL] | [5] | [5] | 从内存收到数据读取指令到实际执行该指令需等待(延迟)的时钟周期,也决定在一次内存突发传送中完成首部分传送所需时钟周期数。最关键参数,延迟越小,内存速度越快。但延迟过低可能会丢失数据,提高延迟可使内存运行在更高的频率 |
| RAS# to CAS# Delay | [tRCD], [tRTC] | [5] | [5] | 行寻址到列寻址延迟时间[RAS to CAS Delay], [Active to CMD] |
| RAS# Precharge | [tRP] | [5] | [5] | 内存行地址控制器预充电时间[Row Precharge Timing], [Precharge to active] |
| RAS# Active Time | [tRAS] | [12] | [12] | 内存行地址激活时钟周期数,也即一个行地址从激活到复位的时间。数值太小会造成不够时间完成一次突发传送,数据丢失或者被覆盖。[RAS Activate to precharge], [Active to Precharge Delay], [Precharge Wait State], [Row Active Time], [Row Active Delay], [Row Precharge Delay] 最佳设置:[tRAS] = [CL] + [tRCD] + 2, 数值<10 性能和稳定性都不会有太大的变化,从DDR起它已越来越不重要 |
| RAS# To RAS# Delay | [tRRD] | [3] | [3] | 连续的激活指令到内存行地址的(预充电)间隔时间, [Row to Row Delay], [Active to Active Delay]延迟越低,下一个bank能更快地被激活进行读写操作。太短的延迟会引起连续数据膨胀。该参数对性能,延迟和稳定性影响较少 |
| Row Refresh Cycle Time | [tRFC] | [42] | [42] | 在同一bank中刷新一个单独的行所需时间, 也是同一bank中两次刷新指令的间隔时间, [Refresh Cycle time], 这个数值SPD默认设置相当大[40-60],实际可稳定运行的值在[20-30]。该参数对性能,延迟,稳定性均无太大的影响。 |
| Write Recovery Time | [tWR] | [6] | [6] | 写恢复时间,在一个激活的bank中完成有效的写操作及预充电前需等待的时钟周期,以确保在预充电前,写缓冲中的数据可以被写进内存单元中。过低的参数可能导致数据的丢失及损坏,即数据还未被正确写入到内存单元中,就发生了预充电操作。它对内存影响理论上有一些,但对高频内存这种程度会小很多 |
| Read To Precharge Time | [tRTP] | [3] | [3] | 内部读取到预充电命令延迟, [Read to Precharge], [Read to Precharge Delay] |
| Read To Write Delay (S/D) | [tRTW] | [8] | [8] | 读到写延时, 三星称其为[TCDLR]=Last Data In To Read Command(最后的数据进入读指令), 内存模块的同一个或不同BANK中,最后一次有效写操作到下一次读操作之间的时钟周期。该参数对内存带宽和稳定性影响也很小 |
| Write To Read Delay (S) | [tWTR](Same Bank) | [3] | [3] | 写到读延时 |
| Write To Read Delay (D) | [tWTR](Different Bank) | [5] | [5] | 写到读延时 |
| Read To Read Delay(S) | [tRTR](Same Bank) | [4] | [4] | 读到读延时 |
| Read To Read Delay(D) | [tRTR](Different Bank) | [6] | [6] | 读到读延时 |
| Write To Write Delay (S) | [tWTW](Same Bank) | [4] | [4] | 写到写延时 |
| Write To Write Delay(D) | [tWTW](Different Bank) | [6] | [6] | 写到写延时 |
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| DRAM Static Read Control | | [Enabled] | [Disabled] | ASUS独家内存静态读取加速控制,[Disabled]有利于内存超频稳定,[Enabled]有利于性能加速特别是3D游戏 |
| Ai Clock Twister | | [Strong] | [Strong] | ASUS独家内存时钟频率加速,提高内存效能:[Light]轻微, [Modertate]适中, [Strong]强劲 |
| Transaction Booster | | [Enabled] | [Enabled] | ASUS独家内存超频性与效能提升,[Enabled]位[Boost Level]效能提升等级, [Disabled]为[Relax Level]兼容提升等级 |
| Boost Level | | [0] | [0] | 效能提升等级, [0]-[3] |
| Relax Level | | | | 兼容提升等级, [0]-[3] |
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| Vcore Voltage | [1.10000-1.70000] | [1.41250]=1.360v | [1.3-1.4] | CPU核心电压,Q6600[0.85v-1.35v][1.100v-1.372v] / [1.40000]=1.344v, [1.40625]=1.352v, [1.41250]=1.360v, [1.41875]=1.365v |
| CPU PLL Voltage | [1.50-2.78] | [1.70] | [Auto] | CPU频率控制芯片电压,超频可设[1.70]-[1.80]-[2.00] |
| FSB Termination Voltage | [1.20-1.50] | [1.44] | [1.50] | FSB前端总线电压,提高有助于高外频运行的稳定性, 超频可设[1.42]-[1.50] |
| DRAM Voltage | [1.80-2.66] | [2.24] | [2.16-2.35] | 内存电压 |
| North Bridge Voltage | [1.25-1.75] | [1.49] | [1.61-1.7] | 北桥核心电压, 超频必选项,可设[1.55] |
| South Bridge Voltage | [1.050-1.200] | [1.050] | [Auto] | 南桥核心电压 |
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| Loadline Calibration | | [Enabled] | [Enabled] | 负载线校正,ASUS独家CPU核心电压稳流技术,减少CPU满载时核心电压的下降(Vdroop),利于CPU超频稳定,旧称[CPU Voltage Damper] |
| CPU GTL Reference | [0.63x-0.61x-0.59x-0.57x] | [0.63x] | [0.63x] | CPU 参考电压,可设[0.63x-0.59x], 校准CPU实际电压与设定值更接近 |
| North Bridge GTL Reference | [0.67x-0.63x-0.60x-0.57x-0.56x-0.53x-0.51x-0.49x] | [0.67x] | [0.67x] | 北桥CTL参考电压, 校准北桥实际运行电压与设定的电压值更加接近 |
| SB 1.5V Voltage | [1.50-1.80] | [1.55] | [Auto] | |
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| CPU Spread Spectrum | | [Disabled] | [Disabled] | CPU 扩展频谱, [Disabled]利于超频 |
| PCIE Spread Spectrum | | [Disabled] | [Disabled] | PCIE 扩展频谱, [Disabled]利于超频 |
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| Advanced - CPU | | | | |
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| CPU Ratio Setting | | [8] | [8] | 此处自动与Extreme Tweaker中的CPU Ratio Setting同步 |
| C1E Support | | [Enabled] | [Disabled] | [Enhanced Halt State] Intel CPU增强暂待时态(休眠),可自动调节倍频和核心电压, 超频[Disabled] |
| CPU TM Function | | [Enabled] | [Disabled] | [Thermal Monitor 1-2], Intel CPU 智能热温监控过热保护,可自动调节倍频和核心电压, 超频[Disabled] |
| Vanderpool Technology | | [Enabled] | | [VT], 虚拟化技术, 在独立分区(同一电脑资源下)分成多个虚拟部分单独运行多系统或多任务,虚拟化有助于平衡多核多线程的计算需求,在不增加能耗下提高性能或增加功能 |
| Execute Disable Bit | | [Enabled] | | [EDB], 防止缓冲存储器溢位,停止“非执行位”功能,相当于硬件防毒 |
| Max CPUID Value Limit | | [Disabled] | [Disabled] | |
| Intel(R) SpeedStep™ Tech | | [功能消失] | [功能消失] | [Enhanced SpeedStep Technology](CIST, ESS), Intel CPU 智能节能, 可自动调节倍频和核心电压, 超频[Disabled], [CPU Ratio Setting]手动设值后, [Intel(R) SpeedStep™ Tech] 选项自动屏蔽 |